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The Impact of Short Channel Effects MOSFET?s Characteristics Due to variation in Threshold Voltage

Author(s):

Reenav Shukla , S.I.R.T.-Bhopal; Apna Joshi, S.I.R.T.-Bhopal; Himanshu Nautiyal, S.I.R.T.-Bhopal

Keywords:

MOSFET , Threshold Voltage , CMOS

Abstract

to get the higher speed, low power dissipation and higher packing density MOS integrated circuits, the dimensions of MOSFETs have continued to shrink, which is done by scaling. With the scaling of MOSFETs into deep-sub micrometer regime, non-ideal effect is becoming a resurgent hot topic in the reliability community. One of the non-ideal effects is the expected increase in threshold voltage variation due to worsening short channel effect. In this paper we analyzed the role of substrate (the body effect) on the threshold voltage. The variation in MOSFET threshold voltage will affect the dynamic, static characteristics and or the short-channel effect (SCE). The most important parameters of a MOSFET are its channel length, the distance between the source and drain. It has been recognized that short-channel MOSFETs offer both speed and density advantages over their long-channel counterparts. In a given generation of technology, however, there is a minimum channel length below which the gate starts to lose control of the MOSFET current. The short channel prevention circuit uses physically meaningful parameters provides an easy way for technology benchmarking and performance projection

Other Details

Paper ID: IJSRDV2I1015
Published in: Volume : 2, Issue : 1
Publication Date: 01/03/2014
Page(s): 50-52

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