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I-V Mesuerment of Se-Sb-Bi Thin Film


Nidhi Jain , M.L.V.Govt College, Bhilwara; Dr. S. L. Kakani, Retd Prof,M.L.V.Govt college, Bhilwara; Dr. K. C. Pancholi, Prof,M.L.V.Govt college, Bhilwara


Chalcogenide Glasses, Thin film, I-V characteristics, Poole-Frankel mechanism, XRD


Amorphous Se90-xSb10Bix (x=0, 2, 4, 6, 8, 10) thin film are obtained by thermal evaporation technique of bulk material on to well cleaned glass substrates. Thin film was characterized by X-ray diffraction and the current – voltage characteristics were carried out in the temperature range (300K-340K). In all the samples, at low voltage, ohmic behavior is observed. However, at high voltage, non-ohmic behavior is observed. It has been also observed that the film containing 4 at wt% of Bi allow the resistance has been explained on the basis of bond formation between Se-Bi at different compositions. The linear relationship between In (I) between V1/2 curves, confirm the conduction mechanism is Poole-Frankel mechanism.

Other Details

Paper ID: IJSRDV3I2583
Published in: Volume : 3, Issue : 2
Publication Date: 01/05/2015
Page(s): 834-836

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