Theoretical Study on a Far-Field Thermophotovoltaic Device based on InGaAsSb |
Author(s): |
| Waly Diallo , UNIVERSITY CHEIKH ANTA DIOP OF DAKAR (UCAD); Moulaye Diagne, UCAD; Nacire Mbengue, UCAD; Omar. A. Niasse, UCAD; Bassirou BA, UCAD |
Keywords: |
| Thermophotovoltaic, InGaAsSb, SiC, power, electrique |
Abstract |
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Because of their excellent conversion efficiency, thermophotovoltaic cells (TPV) are now very attractive. Research shows that these yields outperform those of photovoltaic cells. TPV cells are irradiated with infrared waves. So they require low gap materials. The InGaAsSb is a highly coveted candidate because of its gap which is 0.53 eV unlike silicon which is 1.1 eV. We took silicon carbide as an emitter because its emission spectrum is compatible with the absorption spectrum of InGaAsSb. Our study allowed us to know the electric power obtained taking into account the parameters established in [76]. However, parasitic and optical factors are an obstacle to a good conversion efficiency. |
Other Details |
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Paper ID: IJSRDV6I70318 Published in: Volume : 6, Issue : 7 Publication Date: 01/10/2018 Page(s): 595-598 |
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