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A High Gain Two Stage Low Noise Amplifier using 65nm Technology

Author(s):

Durgesh Kumar Soni , SAGE University,Indore; Mrs. S. Madhavi Bhanwar, SAGE University,Indore

Keywords:

LNA, Gain, Bulk Bias, 5G, NF, Inductor

Abstract

This paper show’s the two-stage low noise amplifier in which first stage is bulk bias. The inductor is connected between two transistor. This inductor increase gain of overall LNA. This LNA is designed for 5G (3.6 GHz) application. The gain achieved by this LNA is 30 dB and NF is 2.1 dB. Whole circuit designed on 65nm technology.

Other Details

Paper ID: IJSRDV8I20285
Published in: Volume : 8, Issue : 2
Publication Date: 01/05/2020
Page(s): 1355-1356

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