Research & Development of Silicon Nanowire : Faster than Silicon Chip

Silicon nanowire (SiNW) is the renowned one dimensional material for future nanoelectronic applications. Nanowires are having unique capability to bridge the nanoscopic with macroscopic world and have already been demonstrated as main material for different energy conversion. Silicon nanowires (SiNWs) have been developed on the substrates of crystalline silicon, indium tin oxide and stainless steel, using a gold catalyst coating with a thickness of 200 nm via pulsed plasma enhanced deposition of chemical vapor. Also known as quantum wires, these connectors are used to connect tiny components together into very small circuits. SiNWs have been described as one of the promising building blocks for the nanodevices using in coming future such as field effect transistors, solar cells, sensors and lithium battery. During the past decade much progress has been made in this field and SiNWs have received much attention especially for applications in the semiconductor industry. There is no restriction how wide they can grow, but cannot grow more than a few nanometers in height.