High Impact Factor : 4.396 icon | Submit Manuscript Online icon |

Design and Analysis of Temperature Sensor using CMOS Technology


Modhya Mehul , ITM Bhilwara; Kumkum Verma, ITM Bhilwara; Sanjay Kumar Jaiswal, ITM Bhilwara




This paper presents CMOS temperature sensor which is designed using starved voltage controlled ring oscillator at 180 nm CMOS technology. CMOS temperature sensor also consists a voltage level shifter, a counter, and a register that is designed using d flip flop. Temperature sensor occupies smaller silicon area with higher resolution than the conventional temperature sensor. Used VCRO has full range voltage controllability along with a wide tuning range and is most suitable for low-voltage operation due to its full range voltage controllability. Various parameters of circuits are calculated. Result shows that speed and power dissipation of circuit are directly proportional to power supply voltage. By increasing temperature we see that power dissipation of circuit increases while delay decreases.

Other Details

Paper ID: IJSRDV2I9167
Published in: Volume : 2, Issue : 9
Publication Date: 01/12/2014
Page(s): 169-172

Article Preview

Download Article