A Study on Recent Advancements in VLSI Technology using FinFETs

In view of difficulties of the planar MOSFET technology to get the acceptable gate control over the channel FinFET technology based on multiple gate devices is better technology option for further shrinking the size of the planar MOSFET, For double gate SOI-MOSFET the gates control the channel created between source and drain terminals effictively .So the several short channel effects like DIBL, sunthreshold swing gate leakage current etc. Without increasing carrier concentration into the channel. Scaling is one of the key factors of any new technology and it governs the design metrics of the complete technology. With the scaling up to sub-micro region, single-gate MOSFETs has served the purpose but as designing moves down in ultra-sub-micro region, the further scaling of single gate MOSFETs leads to a number of short Channel Effects which directly affects the various performance criteria and to resolve these effects, Multi-gate MOSFETs are designed and one of the most widely used and efficient is FinFET. This paper contains the brief explaination of FinFET, its structure overview, features and some of the latest work that has been carried out using FinFET.