Study and Implementation of Band Gap Reference Circuit for Constant Voltage Generation using Foundary Based MOS models |
Author(s): |
| Rishabh Singh , ABES Institute of Technology; Harshit Chaturvedi, ABES Institute of Technology; Prince Divedi, ABES Institute of Technology; Ritik Bhardwaj, ABES Institute of Technology |
Keywords: |
| Dolomite Powder, Compressive Strength, Split Tensile Strength, Flexural Strength |
Abstract |
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This study deals with the design of BGR Circuit. Also detailed analysis of Foundry based MOSFET/BJT models will be done and shown in this work to give an insight on their characteristics. The BGR Circuit will consist of a current reference and generation Circuit, a PTAT and CTAT components which basically are Resistor and diode connected BJT respectively. The design will use the Sub-micron technology model of 45nm CMOS Process. Later in the end this work will show the generation of Voltage which is PVT invariant and constant and corresponds to Bandgap of Semi-conductor device which intrinsic property of the same. |
Other Details |
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Paper ID: IJSRDV10I20240 Published in: Volume : 10, Issue : 2 Publication Date: 01/05/2022 Page(s): 243-245 |
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