A Novel low Power and High Performance 6T Full Adder Design and its Application using Deep Submicron Technology |
Author(s): |
J.Ganesh , prathyusha institute of technology and management; G.Premlatha, prathyusha institute of technology and management; S.Subulakshmi, prathyusha institute of technology and management |
Keywords: |
Full Adder, Ex-Nor, Nano meter, Deep Submicron Technology, 4:2 comparator |
Abstract |
Full adder is one of the major components in the design of many sophisticated hardware design. In this paper the 6T full adder has been designed using a new efficient design with less number of transistors. A 2 transistor EX-NOR has been proposed with the help of two NMOS (negative Metal Oxide Semiconductor) transistors. By using this 2T (EX-NOR and 2:1 MUX) A gate the size of the full adder has been reduced to a large extent which can be implemented with only 6 transistors and applied this design in 4:2 compressor. The proposed full adder has a significant improvement in silicon area and power delay product when compared to the previous 8T full adder design. Further the proposed full adder requires a less area to perform a required logic operation. Further, the proposed full adder and 4:2 compressor has less power dissipation which makes it suitable for many of the low power applications and because of less area requirement the proposed design can be used in more of the portable applications also. It uses 45nm and 90nm in deep submicron technology. |
Other Details |
Paper ID: IJSRDV2I12060 Published in: Volume : 2, Issue : 12 Publication Date: 01/03/2015 Page(s): 122-124 |
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