Realization of TCAM Using STT-RAM for ATM Applications |
Author(s): |
| Gomathi.M , Kalaignar Karunanidhi Institute of Technology; Kiruba.M, Kalaignar Karunanidhi Institute of Technology |
Keywords: |
| TCAM, Spin transfer torque RAM (STT-RAM), ATM, Static power |
Abstract |
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TCAM is the ternary content addressable memory which performs searching operation very speed. TCAMs have certain limitations such as low storage density, relatively slow access time, low scalability, complex circuitry, and are very expensive. In the proposed method TCAM is configured with Spin Transfer Torque RAM (STT-RAM). Spin transfer torque is used to reduce the static power and for storage purpose. Its operation is based on magnetic properties of special materials whose magnetic orientation can be controlled and sensed using electrical signals. The static power is reduced by the transistors which are turned on only for cells involved in read or write operations, thus not consuming any leakage power. The circuit has been designed and simulated using Tanner Tool. The proposed technique achieves 50% power saving and delay decreases up to 81% and it will be implemented in Spartan-6 for ATM applications. |
Other Details |
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Paper ID: IJSRDV2I12225 Published in: Volume : 2, Issue : 12 Publication Date: 01/03/2015 Page(s): 594-597 |
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