Study of ZnO: Al Thin Films prepared by RF Magnetron Sputtering under Different Ar Flow |
Author(s): |
| Himadri Sekhar Das , Haldia Institute of Technology; Rajesh Das, Haldia Institute of Technology; Sayani Bindai, Maulana Abul Kalam Azad University of Technology |
Keywords: |
| ZnO:Al, RF Magnetron Sputtering, Transparent Conductive Oxides, Ar Flow |
Abstract |
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Transparent conductive ZnO: Al thin films with different Ar flow (from 30 to 60 sccm with a step of 10 sccm) with sputtering power of 150 W were prepared on the Coring glass substrate by using rf magnetron sputtering. The lowest resistivity of 3.7×10-4 Ω-cm and highest transmittance of 90% was obtained at Ar flow of 40 sccm. Transmittances for all thin films are about 80-90 % in the visible range. The observed property of the ZnO:Al thin films is suitable for transparent conductive electrode applications. |
Other Details |
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Paper ID: IJSRDV3I120540 Published in: Volume : 3, Issue : 12 Publication Date: 01/03/2016 Page(s): 692-695 |
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