Impact of Channel Width of Sleep Electronic Transistor on Threshold Voltage |
Author(s): |
| Uzma Noormohad Shaikh , SVIT, Chincholi, Nashik; Prof. A.P.Hatkar, SVIT, Chincholi, Nashik |
Keywords: |
| Level Shifter, Threshold Voltage, Multi Supply Voltage |
Abstract |
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Most of the canvasser aforesaid that threshold voltage is method dependant for long channel devices with reference to the various parameters like channel length, Channel breadth, drain voltage VDD, and gate-source voltage. During this paper we tend to chiefly specialise in the Sleep junction transistor breadth. During this Paper, we tend to chiefly gift behaviour of a multi provide voltage interface circuit with reference to variation wide of the sleep junction transistor. Most of the researchers square measure engaged on the traditional level shifter type-I .we chiefly work on the traditional level shifter Type-II. Level shifter use for effective interfacing between voltage domains provided by totally different voltage level. We tend to use Cadence Virtuoso Spectre machine with gpdk180nm technology and doing DC and transient analysis beside temporal arrangement and power analysis. |
Other Details |
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Paper ID: IJSRDV3I50521 Published in: Volume : 3, Issue : 5 Publication Date: 01/08/2015 Page(s): 851-853 |
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