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Design Of High Power Amplifier At 3.4 GHz For Satellite Transponder (IRNSS)

Author(s):

Patel Neel K , L. J. INSTITUTE OF ENGINEERING AND TECHNOLOGY

Keywords:

RF Power Amplifier, Bipolar Junction Transistor (BJT), IRNSS, High Gain

Abstract

this paper gives a step-by-step of the design, simulation and measurement of a Power Amplifier (PA) operating frequency from 2.5GHz to 4.5GHz. The design of Class a Power amplifier was performed in Agilent ADS and the performance was tested with SZA3044Z BJT.

Other Details

Paper ID: IJSRDV4I10253
Published in: Volume : 4, Issue : 1
Publication Date: 01/04/2016
Page(s): 179-182

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