Determination of the Hall Coefficient and Mobility of a Germanium Crystal (N And P Type), Using the Hall Voltage Developed Across the Sample Material

In this paper, Hall Probe, Electromagnet of model EMU-75V, constant power supply, and a digital gauss-meter of model DGM-102 were used in making the Hall Effect experimental set-up as shown in the figure1 below. With an a.c power supply to the arrangement, various readings were obtained following the procedure 3.0 below. With a field of 1000 gauss, the voltage results for the p-type and n-type germanium crystals are recorded, and the difference between which is tabulated respectively. A graph of voltage against current is plotted, and the slope of which was used in calculating the Hall Coefficients, (RH) and the mobilities, µ. The field was later increased to 1500 gauss and the procedure repeated, where the Hall coefficients, mobilities were calculated. The respective average of the Hall coefficients and mobilities were determined and found to be (RH)av = 2.2455 X 10-4 Ωcm/gauss and (µ)av= 2.2455 X 10-5Ωcoulombgauss-1volt-1sec-1 for the p-type germanium crystal; (RH)av= 5.2279 X 10-4Ωcm/gauss and (µ)av = 5.2279 X 10-5 Ωcoulombgauss-1volt-1sec-1for the n-type Germanium crystal.