Ballistic and Scattering Limited Mobility in Gan Single Quantum Well and AlGan/Gan Step Quantum Well: A Comparative Study |
Author(s): |
| Palasri Dhar , Guru Nanak institute of Technology; Aniruddha Ghosal, Calcutta University |
Keywords: |
| AlGaN/GaN, Ballistic |
Abstract |
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In this paper, the authors have calculated the two dimensional mobility in GaN single quantum well and ballastic mobility of AlGaN/GaN step quantum well as a function of gate length. In the case of two dimensional mobility in GaN single quantum well the different lattice scattering mechanisms, namely ionised impurity scattering and acoustic phonon scattering are taken into account. A comparative study of two dimensional mobility of GaN single quantum well and ballastic mobility AlGaN/GaN step quantum well has been made. |
Other Details |
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Paper ID: IJSRDV4I21581 Published in: Volume : 4, Issue : 2 Publication Date: 01/05/2016 Page(s): 1560-1561 |
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