Performance Analysis of Stress Induced PMOS with Embedded Si1-xGex in S/D |
Author(s): |
| Chaudhari Falguni Makanjibhai , Vishwakarma Government Engineering College; Prof. Chintan B. Dave, Vishwakarma Government Engineering College |
Keywords: |
| PMOS, SiGe, MOSFET, TCAD, strained PMOS, stress |
Abstract |
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In this paper, an embedded Si1-xGex in S/D PMOS architecture, with varying gate length and mole fraction, in range of 50nm to 90nm, for studying the impact of induced stress on its performance has been considered. The simulation has been carried out using physics based process and device simulation tool Synopsys Technology Computer Aided Design (TCAD). The analysis shows that the increased stress with Ge mole fraction in the S/D regions increases mobility and hence the drive current significantly. |
Other Details |
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Paper ID: IJSRDV4I21756 Published in: Volume : 4, Issue : 2 Publication Date: 01/05/2016 Page(s): 1511-1553 |
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