Features of GAN Semiconductor and Performance Comparison of Various Gallium Nitride PN Junction Diodes |
Author(s): |
| C. Rekha , PET engineering college; S. Thangamalar, PET engineering college |
Keywords: |
| GAN Semiconductor, Gallium Nitride PN Junction Diodes, GAN diode |
Abstract |
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Nowadays Gallium Nitride material mostly used in the wide band gap semiconductor devices for high frequency applications. The Gallium Nitride is a new material for the field of emerging electronics, whose performance is to be analyzed. In these papers,vertical GaN p-n diodes fabricated on bulk GaN substrates. Then the breakdown voltage increased in the GaN diode by decreasing the drift layer donor density as well as by increasingthe drift layer thickness. The measured characteristics are temperature dependency of V-I characteristics, breakdown voltage and extracted modeling parameters such as electron mobility and minority carrier lifetimes. |
Other Details |
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Paper ID: IJSRDV5I90017 Published in: Volume : 5, Issue : 9 Publication Date: 01/12/2017 Page(s): 111-114 |
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