PERFORMANCE COMPARISON OF MOSFET SWITCH AND GaN DIODE BASED MOSFET SWITCH |
Author(s): |
| S.Thangamalar , PET ENGINEERING COLLEGE; C.Rekha, PET ENGINEERING COLLEGE |
Keywords: |
| GaN Diode, MOSFET Switch |
Abstract |
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The technology advancement semiconductor materials have most improvement in performance, efficiency and reduction in cost, weight. Since the fundamental materials like silicon and germanium are approaching material limits, it is the right time to introduce new material. Nowadays GaN wide bandgap semiconductor materials mostly used in the semiconductor devices for high frequency applications. In this paper, the GaN diode based MOSFET switch designed. Two circuits were designed to compare the switching losses of MOSFET switch and GaN diode based MOSFET switch. The measured characteristics are conduction loss, switching loss, total power loss and efficiency. |
Other Details |
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Paper ID: IJSRDV6I30282 Published in: Volume : 6, Issue : 3 Publication Date: 01/06/2018 Page(s): 1153-1156 |
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