A High Gain Two Stage Low Noise Amplifier using 65nm Technology |
Author(s): |
| Durgesh Kumar Soni , SAGE University,Indore; Mrs. S. Madhavi Bhanwar, SAGE University,Indore |
Keywords: |
| LNA, Gain, Bulk Bias, 5G, NF, Inductor |
Abstract |
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This paper show’s the two-stage low noise amplifier in which first stage is bulk bias. The inductor is connected between two transistor. This inductor increase gain of overall LNA. This LNA is designed for 5G (3.6 GHz) application. The gain achieved by this LNA is 30 dB and NF is 2.1 dB. Whole circuit designed on 65nm technology. |
Other Details |
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Paper ID: IJSRDV8I20285 Published in: Volume : 8, Issue : 2 Publication Date: 01/05/2020 Page(s): 1355-1356 |
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