High Performance DG-Finfet 32nm Technology Based NAND and NOR Gate |
Author(s): |
| Nishant Jaiswal , SKSITS Indore; Devesh Kishore, SKSITS INDORE |
Keywords: |
| CMOS, FinFET, Double Gate, Transient Response |
Abstract |
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The paper present the short gate [SG] FinFET device and explored the advantages over conventional single gate CMOS devices. We have designed the universal gates using both CMOS and FinFET and compared the result. The advantages of FinFET are lower leakage current and larger scaling factor when compared to Complementary Metal Oxide Semiconductor technology. We have used 32nm technology for both the devices. Although there are lot of configuration in FinFET, we have selected Short Gate configuration as it has higher performance [2]. In this paper we have analysed the transient response and power consumption of the circuit. We have used LT-Spice tool to evaluate the performance of both the technology. |
Other Details |
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Paper ID: IJSRDV8I80183 Published in: Volume : 8, Issue : 8 Publication Date: 01/11/2020 Page(s): 388-391 |
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