Logic Circuits using FinFET: Comparative Analysis

The enhancement in the scaling technology has increased the need of low power based circuits. In nanometer regime, CMOS based circuit may not be used due to problem in its fundamental material, short channel effect and high leakage. There is need of better technologies for handling the various consequences of MOSFET technology. FinFET technology presents an alternative to classical MOSFET to achieve low power applications. Today the need to design logic circuits with low power, small area and lower power dissipation with high reliability is increasing. All the logic circuits like Inverter and NAND22 gate in this paper are designed and simulated using HSPICE by Synopsis. This paper presents comparative analysis of MOSFET and FinFET based logic circuits using 32nm technology. It is found that amongst all the designs FinFET based circuits are more suitable for low power applications in nanometer regime. The power dissipation is also found to be 0.247μW for inverter and 0.131 μW and 0.096 μW for NAND2 gate in SG and IG mode which is low.